Semiconductor process

ABSTRACT

A fin-shaped field effect transistor includes a substrate and a gate. The substrate includes an active area, where the active area includes a fin structure having at least an extension part protruding from the fin structure. The gate is disposed over the fin structure and directly on the extension part. The present invention also provides a planar field effect transistor including a substrate and a gate. The substrate includes an active area, where the active area includes a frame area and a penetrating area penetrating through the frame area. The gate is disposed over the active area, where the gate is directly disposed on the penetrating area, and the frame area at least at a side of the gate constitutes a source/drain surrounding an isolation island.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of and claims the benefitof U.S. patent application Ser. No. 14/877,926, filed Oct. 7, 2015 nowU.S. Pat. No. 9,773,880.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates generally to a semiconductor process, aplanar field effect transistor and a fin-shaped field effect transistor,and more specifically to a semiconductor process, a planar field effecttransistor and a fin-shaped field effect transistor including extensionparts enlarging gate channels.

2. Description of the Prior Art

Metal-Oxide-Semiconductors (MOS) transistors are widely usedtransistors. Current transistor includes a gate, a source and a drain.The source and the drain are respectively located in a substrate, andthe gate is located on the substrate between the drain and the source,to control the switching of currents in a gate channel below the gateand sandwiched by the source and the drain. Generally, transistors maybe divided into planar transistors and non-planar transistors.

With increasing miniaturization of semiconductor devices, variousnon-planar transistors such as multi-gate MOSFET devices have beendeveloped. The multi-gate MOSFET is advantageous for the followingreasons. First, manufacturing processes of multi-gate MOSFET devices canbe integrated into traditional logic device processes, and thus are morecompatible. In addition, since the three-dimensional structure of themulti-gate MOSFET increases the overlapping area between the gate andthe substrate, the channel region is controlled more effectively. Thistherefore reduces drain-induced barrier lowering (DIBL) effect and shortchannel effect. Moreover, the channel region is longer for the same gatelength. Therefore, the current between the source and the drain isincreased.

A multi-gate MOSFET may include a fin structure, and the gate isdisposed over the fin structure to form the multi-gate MOSFET differentfrom a planar transistor. A height of the fin structure and a width ofthe gate disposed over the fin structure affect the width and the lengthof the gate channel of the multi-gate MOSFET.

As the integration of integrated circuits enhances, leading to propertylimitations such as material and process limitations, new transistorssuch as planar or non-planar transistors are developed in the industryto increase density of transistors on a substrate as well as currentbetween sources and drains.

SUMMARY OF THE INVENTION

The present invention relates generally to a semiconductor process, aplanar field effect transistor and a fin-shaped field effect transistor,which forms an extension part protruding from a fin structure of thefin-shaped field effect transistor or protruding from a frame area ofthe planar field effect transistor, thereby enlarging gate channels andenhancing operation speed of transistors.

The present invention provides a semiconductor process including thefollowing steps. A substrate including an active area is provided. Afirst etching process is performed to pattern the substrate of theactive area to form a top of a fin structure. A mask covers apreservation area of the substrate. A second etching process isperformed to etch the substrate and deepen the top of the fin structurebut preserve the preservation area, thereby forming the fin structurehaving an extension part protruding from the fin structure. The mask isremoved. Agate is formed over the fin structure, wherein the gate isdirectly on the extension part.

The present invention provides a planar field effect transistorincluding a substrate and a gate. The substrate includes an active area,wherein the active area includes a frame area and a penetrating areapenetrates the frame area. The gate is disposed over the active area,wherein the gate is directly on the penetrating area, and the frame areaon at least one side of the gate constitutes a source/drain andsurrounds an isolation island.

The present invention provides a fin-shaped field effect transistorincluding a substrate and a gate. The substrate includes an active area,wherein the active area includes a fin structure having at least anextension part protruding from the fin structure. The gate is disposedover the fin structure, wherein the gate is directly disposed on theextension part.

According to the above, the present invention provides a semiconductorprocess, a planar field effect transistor and a fin-shaped field effecttransistor, which forms an extension part beside a fin structure of thefin-shaped field effect transistor or an extension area beside a framearea of the planar field effect transistor, and forms a gate directlydisposed over the extension part or the extension area. Thereby, extragate channel can generate in the contact area between the extension partand the fin structure, or the contact area between the extension areaand the frame area, thus enlarging the whole gate channel, increasingelectrical current between a source and a drain, and enhancing operationspeed of a formed transistor. Meanwhile, the capability of controllingthe gate channel can be ensured.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-5 schematically depict three dimensional diagrams of asemiconductor process according to an embodiment of the presentinvention.

FIG. 6 schematically depicts a three-view diagram of a fin-shaped fieldeffect transistor on a bulk substrate according to an embodiment of thepresent invention.

FIG. 7 schematically depicts a three-view diagram of a fin-shaped fieldeffect transistor on a silicon-on-insulator substrate according to anembodiment of the present invention.

FIG. 8 schematically depicts a three-view diagram of a planar fieldeffect transistor on a bulk substrate according to an embodiment of thepresent invention.

FIG. 9 schematically depicts a three-view diagram of a planar fieldeffect transistor on a silicon-on-insulator substrate according to anembodiment of the present invention.

DETAILED DESCRIPTION

FIGS. 1-5 schematically depict three dimensional diagrams of asemiconductor process according to an embodiment of the presentinvention. As shown in FIG. 1, a substrate 110 having an active area Ais provided. The substrate 110 may be a semiconductor substrate such asa silicon substrate, a silicon containing substrate, a III-Vgroup-on-silicon (such as GaN-on-silicon) substrate, agraphene-on-silicon substrate, a silicon-on-insulator (SOI) substrate ora substrate containing epitaxial layers. In this embodiment, thesubstrate 110 is a bulk silicon substrate, but it is not limitedthereto. Masks K1 may cover the substrate 110 to define areas desiredfor forming fin structures, wherein the masks K1 may be a patternednitride layer, but it is not limited thereto. A first etching process P1may be performed to pattern the active area A of the substrate 110,thereby tops 112 a of later formed fin structures being formed. Thefirst etching process P1 is preferably a dry etching process, whichprovides an almost vertical etching according to anisotropiccharacteristic, thereby forming the tops 112 a of the later formed finstructures, wherein the tops 112 a may have vertical sidewalls or havenarrow trapezoid sidewalls widen from top to bottom. In this embodiment,two tops 112 a of the fin structures are depicted, but the number of thetops 112 a is not restricted thereto.

As shown in FIG. 2, a mask K2 may cover a preservation area B of thesubstrate 110. The mask K2 is preferably orthogonal to the tops 112 a ofthe fin structures, but it is not limited thereto. The masks K1 arepreserved as covering the mask K2, thereby the substrate 110 right belowthe masks K1 and the mask K2 are preserved. The mask K2 may be apatterned nitride layer or a photoresist, but it is not limited thereto.In one case, the masks K1 and the mask K2 are preferably commonmaterials while the masks K1 and the mask K2 are removed simultaneouslyin later processes. In this embodiment, the masks K1 are nitride layers,while the mask K2 is a photoresist.

As shown in FIG. 3, a second etching process P2 is performed to etch thesubstrate 110 other than the masks K1 and the mask K2, to deepen thedepths of the tops 112 a, thereby fin structures 112 having the tops 112a and bottoms 112 b being formed. Meanwhile, the substrate 110 of thepreservation area B right below the mask K2 is preserved, thereby anextension part 120 protruding from the fin structures 112 being formed.By doing this, the fin structures 112 and the extension part 120 are allcomposed of same bulk silicon substrate and have common materials,thereby being one piece.

The second etching process P2 is preferably a dry etching process, whichprovides an almost vertical etching according to anisotropiccharacteristic, thereby forming the fin structures 112 and the extensionpart 120 having narrow trapezoid sidewalls widen from top to bottom orvertical sidewalls. In this embodiment, the extension part 120protruding from each of the fin structures 112 merges into one piece andconnects each of the fin structures 112, but it is not limited thereto.In other embodiments, the extension part 120 is located between each ofthe fin structures 112, but does not connect each of the fin structures112. In a preferred embodiment, the mask K2 is orthogonal to the tops112 a of the fin structures 112, therefore the extension part 120 rightbelow the mask K2 is orthogonal to the fin structures 112, but it is notlimited thereto.

It is emphasized that, a height h2 of the extension part 120 must beless than a height h of each of the fin structures 112, and the heighth2 of the extension part 120 is substantially equal to the height of thebottom 112 b of each of the fin structures 112. Furthermore, the heighth2 of the extension part 120 formed by the second etching process P2 asshown in FIG. 3 and the height h of the fin structures 112 can bedetermined, by adjusting the depth etching by the first etching processP1 of FIG. 1, meaning a height h1 of each of the tops 112 a. In apreferred embodiment, the height h1 of each of the tops 112 a is a halfthe height h of each of the fin structures 112. In other words, theheight h2 of the extension part 120 is equal to the height h1 of the top112 a of each of the fin structures 112, and the height h2 of theextension part 120 is equal to a half the height h of each of the finstructures 112. By doing this, short channel effect can be avoided, andlarge resistance can be avoided as well. In other preferred embodiments,the height h2 of the extension part 120 is preferably one-fourth to ahalf the height h of the fin structures 112, but it is not limitedthereto. In this embodiment, the fin structures 112 and the extensionpart 120 protruding from the fin structures 112 are formed by theetching steps of FIGS. 1-3, but it is not limited thereto. Thethree-dimensional structure of the present invention, which includes thefin structures 112 and the extension part 120 protruding from the finstructures 112, may be formed by other methods instead, wherein theheight h2 of the extension part 120 must be less than the height h ofeach of the fin structures 112. In this way, extra gate channels can beformed in contact areas C of the extension part 120 and the finstructures 112 as a gate is disposed over the fin structures 112 anddirectly on the extension part 120. Hence, the whole gate channels canbe enlarged. Besides, the whole gate channels can be well-controlledbecause of each of the fin structures 112 sandwiched by the gate throughthree sides.

Please refer to FIGS. 4-5, an isolation structure 10 is formed besidethe fin structures 112 and the extension part 120. The isolationstructure 10 may be a shallow trench isolation (STI) structure, which isformed by a shallow trench isolation process, but it is not limitedthereto. More precisely, the mask K2 may be removed. Then, the steps offorming the isolation structure 10 beside the fin structures 112 and theextension part 120 may be the steps shown in FIGS. 4-5, but the presentinvention is not restricted thereto. As shown in FIG. 4, an isolationmaterial (not shown) may cover blanketly and be planarized until themasks K1 are exposed, thereby an isolation material 10′ having a flattop surface S1 can be formed, and the flat top surface S1 trims with topsurfaces S2 of the masks K1. The isolation material 10′ is etched untilthe extension part 120 is exposed, thereby the isolation structure 10being formed, wherein a top surface S3 of the isolation structure 10trims with a top surface S4 of the extension part 120, as shown in FIG.5. Thereafter, the masks K1 are removed.

In this case, after the fin structures 112 and the extension part 120protruding from the fin structures 112 are formed, the masks K1 can bepreserved to serve as planarizing and etching stop layers while formingthe isolation structure 10, and then the masks K1 are removed to preventthe fin structures 112 from damage while planarizing and etching. Inother cases, after the fin structures 112 and the extension part 120protruding from the fin structures 112 are formed, the masks K1 and themask K2 maybe removed immediately, thus the fin structures 112 and theextension part 120 may serve as planarizing and etching stop layersrespectively according to materials difference between the finstructures 112 and the extension part 120 composed of silicon, and theisolation structure 10 composed of oxide while forming the isolationstructure 10 as shown in FIGS. 4-5, but it is not limited thereto.

Above all, the present invention forms the fin structures 112 and theextension part 120 protruding from the fin structures 112 by severalsteps etching processes. Thereafter, a gate can be disposed over the finstructures 112 and the extension part 120, and then source/drains can beformed in the fin structures 112, and interconnect structure formingprocesses can be carried out. As a result, enlarging gate channels canbe formed and well-controlled, and the layout density of formedfin-shaped field effect transistors can be maintained. The follow-upsteps such as the steps of forming the gate disposed over the finstructures 112 and the extension part 120, forming the source/drains inthe fin structures 112, and building the interconnect structures can becompatible with modern fin-shaped field effect transistor processes, andthus the present invention is easily adapted to be widely utilized.

Two embodiments including three-view diagrams of fin-shaped field effecttransistors are presented, wherein each of the three-view diagramsincludes a top view and two cross-sectional views orthogonal to eachother.

FIG. 6 schematically depicts a three-view diagram of a fin-shaped fieldeffect transistor on a bulk substrate according to an embodiment of thepresent invention. Please refer to FIGS. 1-5, after the fin structures112 and the extension part 120 protruding from the fin structures 112are formed, a gate 130 is disposed over the fin structures 112 anddirectly located on the extension part 120, wherein the gate 130 mayinclude a gate conductive layer and a gate dielectric layer, and thegate dielectric layer directly contacts the extension part 120 and thefin structures 112. The top diagram of FIG. 6 depicts the gate 130disposed over the fin structures 112, and directly located on theextension part 120, and a length 11 of the extension part 120 is largerthan a length 12 (meaning a gate channel length) of the gate 130. In apreferred embodiment, the length 11 of the extension part 120 is twotimes the length 12 of the gate 130. In this way, tolerance ofmisaligning the gate 130 is reserved, thereby the gate 130 exceeding theextension part 120 being avoided. A width w1 of the extension part 120is preferably equal to the length 12 of the gate 130, wherein the widthw1 is the maximum width of an extra gate channel that currents canapproach. In other words, as the width w1 of the extension part 120 isequal to the length 12 of the gate 130, layout areas can be saved, andthe efficient maximum width can be achieved. An ion implantation processmay be performed to form source/drains 140 in the fin structures 112beside the gate 130, wherein dopants of the source/drains 140 dependupon the electrical types and demands of formed transistors. The middlediagram of FIG. 6 is a cross-sectional view along x1x1′ line of the topdiagram of FIG. 6, wherein the middle diagram depicts the gate 130 isdirectly located on the extension part 120 and does not exceed theextension part 120 to contact the isolation structure 10. The bottomdiagram of FIG. 6 is a cross-sectional view along y1y1′ line of the topdiagram of FIG. 6, wherein the bottom diagram depicts the extension part120 is lower than the fin structures 112, the gate 130 is disposed overthe fin structures 112 and is directly located on the extension part120, wherein the dashed-line is used for representing the extension part120, the fin structures 112 and the isolation structure 10, but does notactually exist in real structures. Due to the fin-shaped field effecttransistors being formed on a bulk substrate in this embodiment, the finstructures 112 and the extension part 120 directly connect the bulksubstrate 110, and a bottom T1 of the isolation structure 10 trims withbottoms T2 of the fin structures 112 and a bottom T3 of the extensionpart 120.

FIG. 7 schematically depicts a three-view diagram of a fin-shaped fieldeffect transistor on a silicon-on-insulator substrate according to anembodiment of the present invention. The previous process of thisembodiment is common to the process of FIGS. 1-5. That is, after the finstructures 112 and the extension part 120 protruding from the finstructures 112 are formed, a gate 130 is disposed over the finstructures 112, and is directly on the extension part 120, thereby thetop diagram of FIG. 7 being common to the top diagram of FIG. 6. Thedifference between this embodiment and the embodiment of FIG. 6 isdepicted in the middle diagram of FIG. 7 (which is a cross-sectionalview along x2x2′ line of the top diagram of FIG. 7) and the bottomdiagram of FIG. 7 (which is a cross-sectional view along y2y2′ line ofthe top diagram of FIG. 7). In this case, the extension part 120 and thefin structures 112 are located on a silicon-on-insulator substrate 210.More precisely, the silicon-on-insulator substrate 210 is an oxide layer212 sandwiched by a bottom silicon layer 214 and a top silicon layer.The extension part 120 and the fin structures 112 may be a remainingpart of the top silicon layer after patterning, so that the extensionpart 120 and the fin structures 112 are located on the oxide layer 212.The isolation structure 10 is formed on the oxide layer 212 beside theextension part 120 and the fin structures 112, wherein the dashed-lineis utilized for representing the oxide layer 212 and the isolationstructure 10. Since the isolation structure 10 and the oxide layer 212are composed of oxide, but both are formed by different methods, amicro-interface between them exists.

According to the above, the embodiments of fin-shaped field effecttransistors applying the present invention are presented, but thepresent invention can also be applied in planar field effecttransistors.

FIG. 8 schematically depicts a three-view diagram of a planar fieldeffect transistor on a bulk substrate according to an embodiment of thepresent invention. The top diagram of FIG. 8 depicts a top view, themiddle diagram of FIG. 8 depicts a cross-sectional view along x3x3′line, and the bottom diagram of FIG. 8 depicts a cross-sectional viewalong y3y3′ line. As shown in FIG. 8, a substrate 310 is provided. Thesubstrate 310 may be a silicon substrate, a silicon containingsubstrate, a III-V group-on-silicon (such as GaN-on-silicon) substrate,a graphene-on-silicon substrate, a silicon-on-insulator (SOI) substrateor a substrate containing epitaxial layers, but it is not limitedthereto. In this embodiment, the substrate 310 is a bulk siliconsubstrate, but it is not limited thereto. The substrate 310 may includean active area D. The active area D may include a frame area 312, apenetrating area 314 and two extension areas 316. The penetrating area314 penetrates through the frame area 312, and the two extension areas316 extend from the penetrating area 314 and protrude from the framearea 312. As this embodiment is a planar field effect transistorembodiment, the frame area 312, the penetrating area 314 and theextension areas 316 are located in one same planar. The frame area 312,the penetrating area 314 and the extension areas 316 may be formed bypatterning a bulk silicon substrate through etching once, but it is notlimited thereto. Thus, recesses (not shown) are formed after patterning,and then an isolation material fills the recesses, thereby isolationislands 30 being formed inside the frame area 312, and an isolationstructure 30′ being formed outside the frame area 312. The isolationislands 30 and the isolation structure 30′ maybe shallow trenchisolation (STI) structures, which may be formed by a shallow trenchisolation (STI) process, but it is not limited thereto.

In this embodiment, two extension areas 316 extend from two ends of thepenetrating area 314 and protrude from the frame area 312, but thenumber of the extension areas 316 is not restricted thereto. In otherembodiments, the extension area 316 may be single, which can extend fromone end of the penetrating area 314 and protrude from the frame area312, but it is not limited thereto.

A gate 330 is disposed over the active area D, and the gate 330 isdirectly on the penetrating area 314 and the extension areas 316. In apreferred embodiment, the whole gate 330 is directly disposed on thepenetrating area 314 and the extension areas 316, but does not contactthe isolation islands 30 as well as the isolation structure 30′. In apreferred embodiment, lengths 15 of the penetrating area 314 and theextension areas 316 are larger than a length 16 of the gate 330. In astill preferred embodiment, the lengths 15 of the penetrating area 314and the extension areas 316 are two times the length 16 of the gate 330.In this way, tolerance of misaligning the gate 330 can be reserved,thereby avoiding the gate 330 from exceeding the penetrating area 314and the extension areas 316. A width w3 of the extension parts 316 ispreferably equal to the length 16 of the gate 330, wherein the width w3is the maximum width of an extra gate channel that currents canapproach. In other words, as the width w3 of the extension parts 316 isequal to the length 16 of the gate 130, layout areas can be saved, andthe efficient maximum width can be achieved. An ion implantation processmay be performed to form a source/drain 340 in the frame area 312 besidethe gate 330, wherein dopants of the source/drain 340 depend upon theelectrical types and demands of formed transistors. The source/drain 340surrounds the isolation islands 30.

FIG. 9 schematically depicts a three-view diagram of a planar fieldeffect transistor on a silicon-on-insulator substrate according to anembodiment of the present invention. The top diagram of FIG. 9 depicts atop view, the middle diagram of FIG. 9 depicts a cross-sectional viewalong x4x4′ line, and the bottom diagram of FIG. 9 depicts across-sectional view along y4y4′ line. The process of this embodiment issimilar to the process of the embodiment of FIG. 8. The differencebetween this embodiment and the embodiment of FIG. 8 is depicted in themiddle diagram of FIG. 9 and the bottom diagram of FIG. 9. In this case,a frame area 412, a penetrating area 414 and two extension areas 416 arelocated on a silicon-on-insulator substrate 410. More precisely, thesilicon-on-insulator substrate 410 includes an oxide layer 412sandwiched by a bottom silicon layer 414 and a top silicon layer. Theframe area 412, the penetrating area 414 and the two extension areas 416may be a remaining part of the top silicon layer after patterning, sothat the frame area 412, the penetrating area 414 and the two extensionareas 416 are located on the oxide layer 412. Isolation islands 40 areformed inside the frame area 412, wherein the dashed-line represents theoxide layer 412, the isolation islands 40 and an isolation structure40′. Since the isolation islands 40, the isolation structure 40′ and theoxide layer 412 are all composed of oxide, but are formed by differentmethods, a micro-interface exists between the isolation islands 40 andthe oxide layer 412 and between the isolation structure 40′ and theoxide layer 412.

To summarize, the present invention provides a semiconductor process, aplanar field effect transistor and a fin-shaped field effect transistor,which forms an extension part beside a fin structure of the fin-shapedfield effect transistor or an extension area beside a frame area of theplanar field effect transistor, and forms a gate disposed over theextension part or the extension area. Thereby, an extra gate channel cangenerate in the contact area between the extension part and the finstructure, or the contact area between the extension area and the framearea, thus enlarging the whole gate channel, increasing electricalcurrent between a source and a drain, and enhancing operation speed oftransistors. Meanwhile, the capability of controlling the gate channelcan be ensured.

Moreover, as the present invention is applied for forming a fin-shapedfield effect transistor, a fin structure and an extension partprotruding from the fin structure maybe formed by etching twiceutilizing masks, wherein a height of the extension part is less than aheight of the fin structure. Then, a gate is disposed over the finstructure and is directly on the extension part. A source/drain may beformed in the fin structure beside the gate. In addition, as the presentinvention is applied for forming a planar field effect transistor, ahollow active area having isolation islands therein can be formed byetching once. That is, a substrate may be patterned to form a framearea, a penetrating area and at least an extension area. The penetratingarea penetrates through the frame area, and the extension area extendsfrom the penetrating area and protrudes from the frame area, wherein theframe area, the penetrating area and the extension area are located inone same plane. Thereafter, a gate is formed directly on the penetratingarea and the extension area. A source/drain is formed in the frame areabeside the gate. By applying the present invention, extra gate channelscan be formed either in a contact area of the extension part and the finstructure, or in a contact area of the extension area and the framearea. As a result, the present invention enlarges the whole gatechannels, increases currents flowing between source/drains, and enhancesoperation speed of formed transistors.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. A semiconductor process, comprising: providing asubstrate, comprising an active area; performing a first etching processto pattern the substrate of the active area to form a top of a finstructure; covering a mask on a preservation area of the substrate;performing a second etching process to etch the substrate and deepen thetop of the fin structure but preserve the preservation area, therebyforming an extension part protruding from the fin structure; removingthe first mask; and forming a gate over the fin structure, wherein thegate is directly on the extension part, thereby forming a fin-shapedfield effect transistor.
 2. The semiconductor process according to claim1, wherein a height of the top is a half a height of the fin structure.3. The semiconductor process according to claim 1, wherein a height ofthe extension part is a half a height of the fin structure.
 4. Thesemiconductor process according to claim 1, further comprising: formingan isolation structure beside the fin structure and the extension partafter the first mask is removed.
 5. The semiconductor process accordingto claim 4, wherein a top surface of the isolation structure trims witha top surface of the extension part.
 6. The semiconductor processaccording to claim 5, wherein the steps of forming the isolationstructure beside the fin structure and the extension part comprise:blanketly covering an isolation material after the first mask isremoved; and planarizing the isolation material until exposing the finstructure and then etching the isolation material until exposing theextension part, thereby forming the isolation structure beside the finstructure and the extension part.
 7. The semiconductor process accordingto claim 4, wherein the whole gate is directly disposed on the extensionpart without contacting the isolation structure.
 8. The semiconductorprocess according to claim 1, wherein the steps of performing the firstetching process to pattern the substrate of the active area to form thetop of the fin structure comprises: covering a second mask on a part ofthe active area; and performing the first etching process to pattern thesubstrate of the active area to form the top of the fin structure. 9.The semiconductor process according to claim 8, wherein the second maskis removed after the extension part is formed.
 10. The semiconductorprocess according to claim 9, wherein the first mask and the second maskare removed at the same time.
 11. The semiconductor process according toclaim 10, wherein the first mask and the second mask comprise commonmaterials.
 12. The semiconductor process according to claim 11, whereinthe first mask and the second mask comprise nitride layers orphotoresists.
 13. The semiconductor process according to claim 1,wherein the substrate comprises a bulk substrate or asilicon-on-insulator substrate.
 14. The semiconductor process accordingto claim 13, wherein the silicon-on-insulator substrate comprises abottom silicon layer, an oxide layer and a top silicon layer stackedfrom bottom to top, and the fin structure is formed from the top siliconlayer.
 15. The semiconductor process according to claim 1, wherein thefin-shaped field effect transistor comprises two of the fin structures,and the two extension parts of the two fin structures merge into onepiece.
 16. The semiconductor process according to claim 1, wherein thefin structure beside the gate constitutes a source/drain.
 17. Thesemiconductor process according to claim 1, wherein a length of theextension part is larger than a length of the gate.
 18. Thesemiconductor process according to claim 17, wherein the length of theextension part is twice the length of the gate.
 19. The semiconductorprocess according to claim 1, wherein a width of the extension partequals a length of the gate.
 20. The semiconductor process according toclaim 1, wherein the extension part is orthogonal to the fin structure.